| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·Low on resistance, low gate charge ·Excellent avalanche characteristics. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APP |
|
|
|
|
INCHANGE |
Ultrafast Recovery Rectifier ·Ultrafast recovery time ·Low forward voltage ·Low loss and soft recovery ·Single diode ·High temperature glass passivated junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC/DC power supplie |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power |
|
|
|
|
INCHANGE |
Modules Standard Diode ·High surge current capability ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PV combiner box ·Battery charges ·Converters ·Power supplies ABSOLUTE MAXIMUM RATINGS SYMBOL |
|
|
|
|
INCHANGE |
Thyristor VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 1 15 mA 1.4 V 100 mA 1.5 V 0.27 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors VS-70TPS16 NOTICE： ISC r |
|
|
|
|
INCHANGE |
Thyristor/Diode ·High voltage ·Low gate current ·Low thermal resistance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·power supplies ·Lighting circuits ·Temperature and motor speed control circuits ELECTRICAL CHA |
|
|
|
|
INCHANGE |
Ultrafast Rectifier ·Ultrafast with soft recovery ·Low forward voltage drop ·175℃ operating junction temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·Higher f |
|
Desde 2024. D4U Semiconductor.
|