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INCHANGE |
Thyristor IT = 0.1 A IRRM Repetitive peak reverse current VRRM =VDRM IDRM Repetitive peak off-state current VRRM =VDRM Tc=25℃ Tc=125℃ Tc=25℃ Tc=125℃ MIN UNIT 800 V 800 V 25 A 16 A 314 A 110 ℃ -45~150 ℃ MIN MAX UNIT 50 mA 90 mA 1.6 V 40 mA 1 |
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INCHANGE |
Thyristor oltage ITM= 24A IGT Gate-trigger current VD = 12 V; RL=33Ω VGT Gate-trigger voltage VD = 12 V; RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.005 2.0 mA 1.6 V 0.5 5 mA 1.3 V 1.3 ℃/W isc website：www.iscsemi.com |
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INCHANGE |
Thyristor A;tp=380μs IGT Gate-trigger current VD = 12V; RL=33Ω VGT Gate-trigger voltage VD = 12V; RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 4 mA 1.6 V 40 mA 1.5 V 1.3 ℃/W isc website：www.iscsemi.com isc & iscsemi i |
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INCHANGE |
Thyristor M Rated Tj=25℃ Tj=125℃ Tj=25℃ Tj=25℃ VTM On-state voltage ITM= 24A;Tp=380μs IGT Gate-trigger current VD = 12 V;RL=33Ω VGT Gate-trigger voltage VD = 12 V;RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 3 mA 0.01 3 |
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INCHANGE |
Thyristor DM=VDRM, ,RGK= 220Ω Tj=25℃ VTM On-state voltage ITM= 32A IGT Gate-trigger current VD= 12V; RL=33Ω VGT Gate-trigger voltage VD= 12V; RL=33Ω IH Holding current IT= 0.5A; Gate Open Rth(j-c) Thermal resistance（DC） Junction to case MIN MAX UN |
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INCHANGE |
Thyristor M=VDRM, ,RGK= 220Ω Tj=125℃ VTM On-state voltage ITM= 48A IGT Gate-trigger current VD = 12 V;RL=100Ω VGT Gate-trigger voltage VD = 12 V;RL=100Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 5 μA 1 mA 5 μA 1 mA 1.5 V 32 mA 1.5 V 1 |
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INCHANGE |
Thyristor VDRM Rated Tj=25℃ Tj=110℃ Tj=25℃ Tj=110℃ VTM On-state voltage ITM= 20A;Tp=380μs IGT Gate-trigger current VD = 12 V;RL=33Ω VGT Gate-trigger voltage VD = 12 V;RL=33Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 2 mA 0.01 |
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INCHANGE |
Thyristor RISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current VRR=600V, Tj=25℃ 0.01 mA IDRM Repetitive peak off-state current VDR=600V, Tj=25℃ 0.01 mA VTM On-state voltage |
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INCHANGE |
Thyristor peak reverse current VR = 600 V Tj=150℃ IDRM VTM IGT VGT Rth(j-h) Repetitive peak off-state current On-state voltage Gate-trigger current Gate-trigger voltage Thermal resistance VD = 600 V Tj=150℃ ITM= 32A;Tj=25℃ VD = 12 V;IT=0.1A ;Tj=25℃ VD = |
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INCHANGE |
Thyristor M=VDRM, ,RGK= 220Ω Tj=25℃ VTM On-state voltage ITM= 24A IGT Gate-trigger current VD= 12V; RL=33Ω VGT Gate-trigger voltage VD= 12V; RL=33Ω IH Holding current IT= 0.5A; Gate Open Rth(j-c) Thermal resistance（DC） Junction to case MIN MAX UNI |
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Desde 2024. D4U Semiconductor.
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