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INCHANGE |
NPN Transistor B= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V ICBO Collector Cutoff Current VCB= 230V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; |
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INCHANGE |
NPN Transistor Saturation Voltage IC= 6.0A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 1V hFE-2 DC Current Gain IC= 6A; VCE= 1V TTC3710B MIN TYP. MAX UNIT 80 |
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INCHANGE |
NPN Transistor Voltage IC= 50mA ; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 0.9A 2.0 V VBE(on) Base-Emitter On Voltage IC= 9A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 160V ; IE=0 1.0 μA IEBO Emitter Cutoff Curre |
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Desde 2024. D4U Semiconductor.
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