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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤2.0Ω. ·Enhancement mode: Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.7mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.8Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.54Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.8Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.8Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.95Ω. ·Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.28mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Re |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.0Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 6mΩ (MAX) ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Re |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.95Ω. ·Enhancement mode: Vth =3.0 to 4.0V (VDS = 10 V, ID=0.28mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Re |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 780mΩ (MAX) ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 3mΩ (MAX) ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Re |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.25Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.22Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.35Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤2.0Ω. ·Enhancement mode: Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.7mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.54Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat |
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Inchange |
Feedback Control Switching Regulator ©q ©q © q © q © q ©q Power MOSFET devices Feedback control for high output voltage precision Driver circuit on-chip Overcurrent protection circuit on-chip Pin compatible with all other devices in the same series of devices with 110 to 280W power rati |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supp |
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Desde 2024. D4U Semiconductor.
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