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Thyristor o + 150 ℃ MAX 5 1 5 1 1.6 UNIT μA mA μA mA V 5 mA 1.3 V 10 mA isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Thyristors T405-600B NOTICE： ISC reserves the rights to make changes of the content herein the datashe |
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Schottky Barrier Rectifier ·With TO-263 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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Schottky Barrier Rectifier ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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N-Channel MOSFET ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 105V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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N-Channel MOSFET ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.14Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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N-Channel MOSFET ·Drain Current –ID=23A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.2Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·De |
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N-Channel MOSFET ·Drain Current –ID= 3.9A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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N-Channel MOSFET ·Drain Current –ID= 6.6A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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N-Channel MOSFET ·Drain Current –ID= 2.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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N-Channel MOSFET ·Drain Current –ID= 205A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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N-Channel MOSFET ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.7mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Desde 2024. D4U Semiconductor.
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