| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
INCHANGE |
Thyristors Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V; IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V; IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscse |
|
|
|
|
INCHANGE |
Thyristors ·With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ·For general purpose switching and phase control applications. ·Minimum Lot-to-Lot variations for robust device performance and reliabl |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.6mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
|
|
|
Inchange Semiconductor |
Thyristors ·With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ·For general purpose switching and phase control applications. ·Minimum Lot-to-Lot variations for robust device performance and reliabl |
|
|
|
|
INCHANGE |
Thyristors Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V; IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V; IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscse |
|
|
|
|
INCHANGE |
Thyristors Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V; IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V; IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscse |
|
|
|
|
INCHANGE |
Thyristor less otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ 0.01 2 mA VTM On-state voltage IGT Gate-trigger current |
|
|
|
|
INCHANGE |
Thyristor is guaranted at 5% of IGT VD = 12 V;RL=30Ω max）Quadrant(I - II - III) VGT Gate-trigger voltage Quadrant (I - II - III) VD = 12 V;RL=30Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 5 μA 2 mA 5 μA 2 mA 1.55 V 10 mA 1.3 V 1.2 ℃/W i |
|
|
|
|
INCHANGE |
Thyristor 5℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage IT=22.6A Ⅰ VD =12V;RL=30Ω Ⅱ Ⅲ VD =12V;RL=30Ω Rth (j-c) Junction to case For DC MIN MAX UNIT 5 μA 1 mA 1.55 V 35 35 mA 35 1.3 V 2.1 ℃/W isc website：www.iscsemi.com i |
|
|
|
|
INCHANGE |
Thyristor age IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=22.6A VD =12V;RG=30Ω VD =12V;RG=30Ω Half cycle Ⅰ 1.75 Ⅱ 1.75 Ⅲ 1.75 1.55 35 35 35 1.3 1.1 V mA V ℃/W isc website：www.iscsemi.com isc & iscsemi is registered |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 178A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|
|
|
|
INCHANGE |
Triacs ·With TO-220AB non insulated package ·Suitables for general purpose where high surge current capability is required. ·Application such as phase control and tatic switching on inductive or resistive load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR |
|
|
|
|
INCHANGE |
Thyristors Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V; IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V; IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscse |
|
|
|
|
INCHANGE |
Thyristor is guaranted at 5% of IGT VD = 12 V;RL=30Ω max）Quadrant(I - II - III) VGT Gate-trigger voltage Quadrant (I - II - III) VD = 12 V;RL=30Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 5 μA 2 mA 5 μA 2 mA 1.55 V 10 mA 1.3 V 1.2 ℃/W i |
|
|
|
|
INCHANGE |
Thyristor is guaranted at 5% of IGT VD = 12 V;RL=30Ω max）Quadrant(I - II - III) VGT Gate-trigger voltage Quadrant (I - II - III) VD = 12 V;RL=30Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 5 μA 2 mA 5 μA 2 mA 1.55 V 35 mA 1.3 V 1.2 ℃/W i |
|
|
|
|
INCHANGE |
Thyristor age IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=22.6A VD =12V;RG=30Ω VD =12V;RG=30Ω Half cycle 1.55 V Ⅰ 35 Ⅱ 35 mA Ⅲ 35 1.3 V 2.1 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered tradem |
|
|
|
|
INCHANGE |
Triac ·With TO-263 package. ·Be suitable for general purpose AC switching,they can be used as an ON/OFF function in applications. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.37Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
|
Desde 2024. D4U Semiconductor.
|