| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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INCHANGE |
Ultrafast High Voltage Diode ·High surge current capability ·Wide current range ·High voltage ratings up to 1200V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Be suitable in motor control circuitries, or in the primary of SMP |
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INCHANGE |
ULTRAFAST HIGH VOLTAGE DIODE ·Ultra-fast and soft recovery ·High frequency operations ·Very low overall power losses ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control freewheel applications ·Booster diode applications |
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INCHANGE |
Ultrafast Rectifier ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operat |
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INCHANGE |
Ultrafast Recovery Rectifier ·Low forward voltage drop ·High Current Capability ·High reliability ·High surge Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power supplies and power conver |
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INCHANGE |
Ultrafast Rectifier ·With TO-252(DPAK) packaging ·High junction temperature capability ·Low forward voltage, high current capability ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
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INCHANGE |
Ultrafast Rectifier ·Ultrafast with soft recovery ·175℃ Operating temperature ·Popular TO-220F package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General purpose A |
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Inchange Semiconductor |
Ultrafast Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and relia |
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INCHANGE |
Ultrafast Rectifier ·With TO-220F packaging ·High performance fast recovery diode ·Low loss and soft recovery ·High current capability ·Low reverse leakage current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switchi |
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INCHANGE |
Ultrafast Rectifier ·Ultrafast, soft and noise-free recovery ·Packaged in TO-263(D2PAK) ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General |
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INCHANGE |
Ultrafast Rectifier ·With TO-263(DPAK) packaging ·Low forward voltage drop ·Super high speed switching ·High reliability by planer design ·High surge current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Sw |
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INCHANGE |
Hight frequency secondary rectifier ·Guarding for over voltage protection ·Combines highest recovery and reverse voltage performance ·Ultra-fast, soft and noise-free recovery ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable |
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INCHANGE |
Ultra fast Rectifier ·With TO-220F packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for over voltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable oper |
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INCHANGE |
Ultra fast Rectifier ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for over voltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
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INCHANGE |
Ultra fast Rectifier ·High reverse voltage capability ·Low switching loss ·High surge current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General rectificat |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Power switching circu |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Power switching circu |
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Desde 2024. D4U Semiconductor.
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