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INCHANGE |
NPN Transistor ration Voltage IC= 3A; IB= 375mA ICEO Collector Cutoff Current VCE= 30V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC=20mA ; VCE=4V hFE-2 DC Current Gain IC=1A ; VCE=4V 2ST31A MIN TYP. MAX UNIT 60 V 1.2 |
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Schottky Barrier Rectifier ·With TO-247 packaging ·Low leakage current ·Low power loss ·High efficiency ·High surge capacity ·Guarding for overvoltage protection ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA |
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INCHANGE |
Schottky Barrier Rectifier ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot vari |
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INCHANGE |
Schottky Barrier Rectifier ·Center tap configuration ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Ultralow forward voltage drop ·High frequency operation ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device perf |
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Desde 2024. D4U Semiconductor.
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