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NPN Transistor otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 9 V VCE(sat) Collector-Emitter Saturation Volta |
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Phase Control Thyristor ·Center amplifying gate ·Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200 V) ·International standard case TO-209AB (TO-93) ·Compression Bonded Encapsulation for heavy duty operations such as severe thermal c |
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Desde 2024. D4U Semiconductor.
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