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INCHANGE |
N-Channel MOSFET NIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=40A 0.01 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 |
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Desde 2024. D4U Semiconductor.
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