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INCHANGE |
Silicon NPN Power Transistor llector-Emitter Saturation Voltage IC=800mA; IB= 80mA VBE(sat) base-emitter saturation voltage IC= 800mA; IB=80mA ICBO collector cut-off current I CEO collector cut-off current VCB =40 V,IE = 0 VCE= 20V, IB=0 IEBO Emitter Cutoff Current VEB=5 |
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Desde 2024. D4U Semiconductor.
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