| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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INCHANGE |
Schottky Barrier Rectifier ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High current capability ·low forward voltage drop ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltag |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-220F packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching |
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INCHANGE |
Schottky Barrier Rectifier ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot vari |
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INCHANGE |
Schottky Barrier Rectifier ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot vari |
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INCHANGE |
Schottky Barrier Rectifier ·Plastic material used carriers Underwriter Laboratory ·Guard ring for transient protection ·Low power loss,high efficiency ·High current capability,low VF ·High surge capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-220F packaging ·High junction temperature capability ·Low forward voltage ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching |
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Desde 2024. D4U Semiconductor.
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