INCHANGE SPW Hoja de datos

No.	parte #	Fabricante	Descripción
1	SPW47N60CFD	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤83mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25
2	SPW11N80C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤450mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL
3	SPW11N60C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=
4	SPW17N80C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤290mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=
5	SPW52N50C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
6	SPW20N60S5	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
7	SPW11N60CFD	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤440mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2
8	SPW16N50C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
9	SPW47N60C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
10	SPW35N60CFD	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤118mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2
11	SPW21N50C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
12	SPW24N60C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤160mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2
13	SPW24N60CFD	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2
14	SPW15N60CFD	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤330mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2
15	SPW20N60CFD	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤220mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=
16	SPW12N50C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
17	SPW15N60C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃
18	SPW47N65C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=2
19	SPW35N60C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤100mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
20	SPW32N50C3	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤110mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)