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INCHANGE |
NPN Transistor S V(BR)EBO Emitter-Base Breakdown Voltage IE=10uA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=10uA ,IE=0 VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter |
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Desde 2024. D4U Semiconductor.
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