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INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
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INCHANGE |
Thyristor VD=VDRM Rated; Tc=25℃ Tc=100℃ Tc=125℃ MIN MAX UNIT 0.01 1 mA 2 VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage VD =12V;RL=60Ω; VD =12V;RL=60Ω; 1.6 V 35 mA 1.5 V isc website：www.iscsemi.com isc & iscsemi is registered |
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INCHANGE |
N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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INCHANGE |
N-Channel MOSFET ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-263 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-263(D2PAK) packaging ·Low leakage current, low power loss, high efficiency ·High frequency operation ·High current capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device performance and rel |
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INCHANGE |
Thyristor Ω Tj=125℃ VTM On-state voltage ITM= 75A IGT Gate-trigger current VD = 12 V;RL=100Ω VGT Gate-trigger voltage VD = 12 V; IT = 0.1 A Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 10 μA 2 mA 10 μA 2 mA 1.4 V 30 mA 1.5 V 2.05 ℃/W is |
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INCHANGE |
Thyristor off-state current Tc=25℃ Tc=100℃ Tc=125℃ MIN MAX UNIT 0.01 0.5 mA 1 VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage VD =12V;RL=60Ω VD =12V;RL=60Ω 1.6 V 30 mA 1.5 V isc website：www.iscsemi.com isc & iscsemi is regi |
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INCHANGE |
Thyristor rent VD=VDRM Rated; Tc=25℃ Tc=100℃ Tc=125℃ VTM On-state voltage IGT Gate-trigger current VGT Gate-trigger voltage VD =12V;RL=60Ω; VD =12V;RL=60Ω; MIN MAX UNIT 0.01 0.5 mA 1 1.6 V 30 mA 1.5 V isc website：www.iscsemi.com isc & iscsemi is |
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INCHANGE |
Thyristor GT Gate-trigger current VD = 12 V; IT = 0.1 A VGT Gate-trigger voltage VD = 12 V; IT = 0.1 A Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 mA 1 mA 1.6 V 15 mA 1.5 V 2.05 ℃/W NOTICE： ISC reserves the rights to make changes of |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High surge capability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot varia |
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Desde 2024. D4U Semiconductor.
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