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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM R |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA |
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INCHANGE |
N-Channel MOSFET ·Drain Current: ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
NPN Transistor r-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICEO Collector Cutoff Current VCE= 400V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 IcBO Collector Cutoff Baset VCB= 1000V; VcE= 0 hFE DC Current Gain IC= 1A; VCE= 5V S2530A MIN TYP |
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INCHANGE |
Schottky Barrier Rectifier ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: TO-263 package ·Mounting position: Any A |
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Desde 2024. D4U Semiconductor.
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