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INCHANGE |
Ultrafast Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and relia |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
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INCHANGE |
Ultrafast Recovery Rectifier ·Guarding for over voltage protection ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switchi |
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INCHANGE |
Ultrafast Rectifier ·1200V blocking voltage ·20mJ avalanche energy ·12V(typical) peak transient overshoot voltage ·135ns (typical) forward recovery time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This power rectifi |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
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INCHANGE |
Ultrafast Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and relia |
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INCHANGE |
Ultrafast Rectifier ·Ultrafast with soft recovery ·175℃ Operating temperature ·Popular TO-220 package ·Avalanche energy rated ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply |
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INCHANGE |
Ultrafast Rectifier ·Popular TO-220 package ·Low forward drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies,inverters and as free wheeling diodes. ABSOLUTE MAXIMUM RATINGS |
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INCHANGE |
Ultrafast Rectifier ·Ultra-Fast Switching ·High current capability ·Low forward voltage drop ·Low power loss,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuit |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and relia |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant an |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast with soft recovery ·175℃ Operating temperature ·Popular TO-220 package ·Avalanche energy rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circu |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
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Inchange Semiconductor |
UltraFast REcovery Rectifiers ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Res |
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INCHANGE |
Ultrafast Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Minimum Lot-to-Lot variations for robust device performance and relia |
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INCHANGE |
Ultrafast Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic |
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INCHANGE |
Ultrafast Rectifier ·With TO-220F packaging ·Low switching loss ·High surge current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circuits ·General rectification ABSO |
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INCHANGE |
Ultrafast Rectifier ·Ultrafast recovery time ·175℃ Operating temperature ·Low forward voltage drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ABSOLUTE MAXIMUM RATIN |
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INCHANGE |
Ultrafast Recovery Rectifier ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·175℃ Operating Junction Temperature ·High Temperature Glass Passivated Junction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Des |
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INCHANGE |
Ultrafast Rectifier ·Guarding for over voltage protection ·Dual rectifier construction,positive center tap ·Metal of silicon rectifier,majority carrier conduction ·Low forward voltage,high efficiency ·Pb-Free Packages are Available ·100% avalanche tested ·Minimum Lot-to |
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Desde 2024. D4U Semiconductor.
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