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INCHANGE |
NPN Transistor own Voltage IE= 20mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA ICBO Collector Cutoff Current VCB= 330V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 68mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Desde 2024. D4U Semiconductor.
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