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PNP Transistor llector-Emitter Breakdown Voltage IC= -50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutof |
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PNP Transistor turation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -1V hFE-2 DC C |
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PNP Transistor llector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; V |
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PNP Transistor ~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor KSB601 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter |
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PNP Transistor er Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; I |
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PNP Transistor se specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff C |
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PNP Transistor OL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= - |
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PNP Transistor TYP MAX UNIT -1 V -1 V -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 μA hFE1 DC Current Gain hFE2 DC Current Gain IC=- 0.5A; VCE=- 5V 60 200 IC= -3A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V |
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Desde 2024. D4U Semiconductor.
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