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N-Channel MOSFET Transistor ; ID=1mA VGS= 10V; ID= 6A VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 MIN MAX UNIT 600 V 1.5 3.5 V 0.65 Ω ±100 nA 300 µA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro w |
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N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.25Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.85mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Vo |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 2SK1705 MIN MAX UNIT 500 V 2 4 V 0.9 Ω ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in |
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Inchange Semiconductor |
N-Channel MOSFET Transistor IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 2SK1706 MIN MAX UNIT 500 V 2 4 V 0.9 Ω ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inform |
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INCHANGE |
N-Channel MOSFET Transistor IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 2SK1723 MIN MAX UNIT 600 V 1.5 3.5 V 0.65 Ω ±100 nA 300 µA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The |
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Inchange Semiconductor |
N-Channel MOSFET Transistor S(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacit |
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Inchange Semiconductor |
N-Channel MOSFET Transistor S; ID=1mA VGS= 10V; ID= 3A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 MIN MAX UNIT 600 V 2.0 4.0 V 1.3 Ω ±100 nA 1 mA isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.20Ω (typ.) ·Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performa |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.2Ω ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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Inchange Semiconductor |
N-Channel MOSFET Transistor VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=10V; VGS=0V; fT=1MHz tr Rise Time ton Turn-on Time tf Fall Time toff Turn-o |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 2SK1709 MIN MAX UNIT 600 V 2.0 4.0 V 1.3 Ω ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The |
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Inchange Semiconductor |
N-Channel MOSFET Transistor IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 2SK1707 MIN MAX UNIT 600 V 2.0 4.0 V 2.6 Ω ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The |
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Inchange Semiconductor |
N-Channel MOSFET Transistor IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 2SK1708 MIN MAX UNIT 600 V 2.0 4.0 V 2.6 Ω ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in |
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Inchange Semiconductor |
N-Channel MOSFET Transistor IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK1700 MIN TYP MAX UNIT 450 V 2.0 4.0 V 1.8 Ω ±10 uA 250 uA NOTICE： ISC reserves the rights to make changes of the content here |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.19Ω (typ.) ·Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Vol |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.2Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regu |
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Inchange Semiconductor |
N-Channel MOSFET Transistor IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS= 0 2SK1766 MIN MAX UNIT 250 V 1.5 3.5 V 0.6 Ω ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i |
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Inchange Semiconductor |
N-Channel MOSFET Transistor urrent VDS= 500V; VGS= 0 2SK1704 MIN MAX UNIT 500 V 2 4 V 2.4 Ω ±100 nA 1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is prese |
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Inchange Semiconductor |
N-Channel MOSFET Transistor SS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 2SK1703 MIN TYP MAX UNIT 500 V 2.0 4.0 V 2.4 Ω ±10 uA 250 uA NOTICE： ISC reserves the rights to make changes of the content herein |
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Inchange Semiconductor |
N-Channel MOSFET Transistor IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK1701 MIN TYP MAX UNIT 450 V 2.0 4.0 V 0.73 Ω ±10 uA 250 uA NOTICE： ISC reserves the rights to make changes of the content her |
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Desde 2024. D4U Semiconductor.
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