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N-Channel MOSFET CTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 75A IGSS Gate Source Leakag |
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N-Channel MOSFET ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE |
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N-Channel MOSFET S Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage ISD=75A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=75A IGSS Gate-Body Leakage Current VGS=±20V;V |
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Desde 2024. D4U Semiconductor.
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