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P-Channel MOSFET ·Drain Current –ID= -31A@ TC=25℃ ·Drain Source Voltage- : VDSS= -55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Desde 2024. D4U Semiconductor.
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