INCHANGE FQD Hoja de datos

No.	parte #	Fabricante	Descripción
1	FQD7P20	INCHANGE	P-Channel MOSFET ·Drain Current –ID= -5.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPT
2	FQD50N06	INCHANGE	N-Channel MOSFET ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current ,
3	FQD50P06	INCHANGE	P-Channel MOSFET ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D
4	FQD13N10	INCHANGE	N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V