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INCHANGE |
NPN Transistor Base-Emitter Saturation Voltage IC= 11A; IB=2.75A ICBO Collector Cutoff Current VCB= 1400V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC=11A; VCE= 5V FJL6920 MIN TYP. M |
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INCHANGE |
NPN Transistor ; IB= 0 BVEBO Emitter-Base Breakdown Voltage IE= 0.5mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 11A; IB= 2.75A VBE(sat) Base-Emitter Saturation Voltage IC= 11A; IB= 2.75A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICE |
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Desde 2024. D4U Semiconductor.
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