| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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INCHANGE |
NPN Transistor = 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 750V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VC |
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INCHANGE |
NPN Transistor tor-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 230 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 230 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A |
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INCHANGE |
PNP Transistor Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ -230 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -230 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= |
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INCHANGE |
NPN Transistor kdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hF |
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INCHANGE |
PNP Transistor ase Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= |
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Desde 2024. D4U Semiconductor.
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