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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 260mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·With TO-252(DPAK) packaging ·UIS capability ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AD-AC power supply ·LED |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤850mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·LED lighting ·ABSOLUTE MAXIMUM RATINGS(Ta=2 |
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Desde 2024. D4U Semiconductor.
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