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INCHANGE |
N-Channel MOSFET ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High frequency switching mode power supply ·Electronic ballast ·UPS · |
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INCHANGE |
Thyristors etitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ VTM On-state voltage ITM= 30A IGT Gate-trigger current VD = 6V VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-263 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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Desde 2024. D4U Semiconductor.
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