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INCHANGE |
NPN Transistor PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= |
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INCHANGE |
NPN Transistor 5℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VB CEO(SUS)B Collector-Emitter Voltage Sustaining IB CB =50mA; I = BB B 0 VB CE(sat)-1B Collector-Emitter Voltage Saturation I = CB B 8 A; I = BB B 100mA VB CE(sat)-2B C |
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INCHANGE |
NPN Transistor Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Collector-Emitter Saturat |
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INCHANGE |
NPN Transistor CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 10mA VCE(sat)-1 Collector-Emitter Saturation Voltage ICB= 8A; IBB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage ICB= 10A; IB= 0.25A VCE(sat)-3 Collector-Emitter Saturation Vo |
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INCHANGE |
NPN Transistor IT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8 A; IB= 150mA 1.8 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Cur |
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INCHANGE |
NPN Transistor TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)-1 B |
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Inchange Semiconductor |
Silicon NPN Power Transistor TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)-1 B |
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INCHANGE |
NPN Transistor ISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BU941ZPFI MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V |
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INCHANGE |
NPN Transistor rwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 30mA VCE(sat)-1 Collector-Emitter Saturation Voltage ICB= 8A; IB B= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage ICB= 10A; IB= 0.25A VCE(s |
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INCHANGE |
NPN Transistor MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Colle |
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INCHANGE |
NPN Transistor ONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V |
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INCHANGE |
NPN Transistor S) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Sustaining IC= 50mA; IB= 0 Saturation IC= 8 A; IB= 100mA Saturation IC= 10 A; IB= 250mA Saturation IC= 12 A; |
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INCHANGE |
NPN Transistor MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)- |
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INCHANGE |
NPN Transistor PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 1 |
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INCHANGE |
NPN Transistor TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)-1 B |
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INCHANGE |
NPN Transistor MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)- |
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INCHANGE |
NPN Transistor VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0; L= 10mH 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Colle |
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INCHANGE |
NPN Transistor CAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V |
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INCHANGE |
NPN Transistor VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V VBE(sat)-1 Base-Emitter S |
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NPN Transistor llector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 150mA 1.8 V V BE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 8A; IB |
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Desde 2024. D4U Semiconductor.
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