| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
INCHANGE |
NPN Transistor TERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VCE(sat)-2 Collector-Emitter Saturation Volt |
|
|
|
|
INCHANGE |
NPN Transistor ion to Case isc website：www.iscsemi.com 6.12 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU306F/307F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified S |
|
|
|
|
INCHANGE |
NPN Transistor th j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltag |
|
|
|
|
INCHANGE |
NPN Transistor ecified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA VCE(sat)-3 C |
|
|
|
|
INCHANGE |
NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-Emit |
|
|
|
|
Inchange Semiconductor |
Silicon Darlington NPN Power Transistor pecified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage |
|
|
|
|
INCHANGE |
NPN Transistor ion to Case isc website：www.iscsemi.com 6.12 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU306F/307F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified S |
|
|
|
|
INCHANGE |
NPN Transistor S ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-E |
|
|
|
|
INCHANGE |
NPN Transistor ctor isc Silicon NPN Power Transistor BU326A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collect |
|
|
|
|
INCHANGE |
NPN Transistor m 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU306F/307F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage |
|
|
|
|
INCHANGE |
NPN Transistor m 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU306F/307F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage |
|
|
|
|
INCHANGE |
NPN Transistor otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA 1.5 V VCE(sat)-2 Collector-Emitter Satur |
|
Desde 2024. D4U Semiconductor.
|