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INCHANGE |
Schottky Barrier Rectifier ·Low forward voltage drop ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use |
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INCHANGE |
Schottky Barrier Rectifier ·Low forward voltage drop ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use |
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INCHANGE |
Ultrafast Rectifier ·With TO-247 packaging ·High performance fast recovery diode ·Low loss and soft recovery ·Common cathode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circui |
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INCHANGE |
Fast Recovery Rectifier ·Ultrafast with soft recovery ·Very low leakage current ·Avalanche energy rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ABSOLUTE MAXIMUM RATI |
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INCHANGE |
PNP Transistor ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & i |
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INCHANGE |
PNP Transistor 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage VCE(sat) Collector-Emitter Satura |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=330V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·High dv/dt capability ·Pb-Free Packages are Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera |
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Inchange Semiconductor |
Ultrafast Recovery Rectifier ·Ultrafast with soft recovery ·175℃ Operating temperature ·Popular TO-220 package ·Avalanche energy rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Power switching circu |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Schottky Barrier Chip ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·100% avalanche tested ·Minimum Lot-to |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Schottky barrier chip ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS |
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INCHANGE |
PNP Transistor RAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARA |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·100% avalanche tested ·Minimum Lot-to-Lot va |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Low Forward Voltage ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance a |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-220 packaging ·High junction temperature capability ·Low forward voltage drop ·High current capability ·Low power loss, high efficiency ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch |
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Desde 2024. D4U Semiconductor.
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