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Inchange Semiconductor |
N-Channel MOSFET Transistor 5℃) SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward on-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Cap |
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Inchange Semiconductor |
N-Channel MOSFET Transistor TRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A IGSS Gate Source Lea |
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Inchange Semiconductor |
N-Channel MOSFET Transistor oltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=25A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=15A;RL=2Ω toff Turn-off time 2SK1346 MIN TYP MAX UNIT 60 V 1.5 3.5 V 0.04 0.06 Ω ±100 nA 300 u |
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Inchange Semiconductor |
N-Channel MOSFET Transistor DS= 0 IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 VSD Diode Forward Voltage IF= 5A; VGS=0 2SK350 MIN TYP MAX UNIT 450 V 1.0 5.0 V 0.67 0.90 Ω ±1 uA 1 mA 0.85 V NOTICE： ISC reserves the rights to make changes of the con |
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Inchange Semiconductor |
2SK2299 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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Inchange Semiconductor |
N-Channel MOSFET Transistor te Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 VSD Forward On-Voltage IS=7A; VGS=0 tr |
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Inchange Semiconductor |
N-Channel MOSFET Transistor VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input capacitance Crss Reverse transfer capacitance Coss Output capacitance tr Rise time ton Turn-o |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor e Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Forward On-Voltage IS=6A; VGS=0 tr |
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INCHANGE |
N-Channel MOSFET ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·High speed Switching ·Repetitive Avalanche rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC converter,Switching Reg |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward |
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Inchange Semiconductor |
N-Channel MOSFET Transistor D= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=8A VSD Diode Forward Voltage IF= 15A; VGS= 0 IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 2SK725 MIN TYP. MAX UNIT 5 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor AL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A IGSS Gate Source Leakage |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for low voltage, high speed power switching appli |
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INCHANGE |
2SK2186 5A; VGS=0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 5A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capaci |
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INCHANGE |
N-Channel MOSFET Transistor A VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 VSD Diode Forward Voltage IF |
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INCHANGE |
N-Channel MOSFET old Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Forward On-Voltage IS=4.5A; VGS=0 tr Ris |
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Desde 2024. D4U Semiconductor.
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