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Inchange Semiconductor |
POWER TRANSISTOR DITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -5V -1.5 V ICBO Colle |
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Inchange Semiconductor |
POWER TRANSISTOR ollector-Emitter Voltage Breakdown IC= -25mA ; IB= 0 Saturation IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance |
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Inchange Semiconductor |
POWER TRANSISTOR Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VCE(sa |
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Inchange Semiconductor |
2SA940 ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakd |
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Inchange Semiconductor |
POWER TRANSISTOR ge IC= -5A; IB= -0.5A B -0.5 V ICBO Collector Cutoff Current VCB= -140V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1 |
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Inchange Semiconductor |
POWER TRANSISTOR age IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V hFE Classifications O P Y 50-100 70-140 90-180 2SA1215 MIN TYP. MAX UNIT -160 |
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INCHANGE |
2SA614 UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -55 V V(BR)CBO Collector-Base Breakdown Voltage IC= -500μA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -500μA; IC= 0 -5 V VCE(sat) Collector-Emitter Satu |
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Inchange Semiconductor Company Limited |
Silicon PNP Power Transistor Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A ICBO Collector Cutoff Current VCB= -180V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -8A; VCE= -4V COB Output Capacit |
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Inchange Semiconductor |
Silicon PNP Power Transistor Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -230V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz fT Current-Gai |
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Inchange Semiconductor |
POWER TRANSISTOR itter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V VBEsat Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 -30 V hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 |
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Inchange Semiconductor |
POWER TRANSISTOR T V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -1 |
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Inchange Semiconductor |
POWER TRANSISTOR VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -5V ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A; V |
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Inchange Semiconductor |
Silicon PNP Power Transistor itter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 IEBO Emitter Cutoff Current VEB= - |
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Inchange Semiconductor |
Silicon PNP Power Transistor (BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V; |
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Inchange Semiconductor |
Silicon PNP Power Transistor 0mA ; IB= -1mA VBE(on) Base-Emitter On Voltage IC= -2mA ; VCE= -12V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -2V; IC= 0 hFE DC Current Gain IC=-2mA ; VCE= -12V fT Current-Gain—Bandwidth Product IC= |
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Inchange Semiconductor |
Power Transistor age IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 |
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Inchange Semiconductor |
POWER TRANSISTOR Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -8A; VCE= -4V 2SA1170 MIN TYP. MAX UNIT -200 V -6 V -2.5 V -100 μA -100 μA 20 NOTICE： ISC reserves the rights to make changes of the conte |
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Inchange Semiconductor |
POWER TRANSISTOR tor-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -140V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4 |
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Inchange Semiconductor |
POWER TRANSISTOR ltage IC= -2mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V |
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Inchange Semiconductor |
POWER TRANSISTOR ollector-Emitter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V |
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Desde 2024. D4U Semiconductor.
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