No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Integrated Device Technology |
3.3V CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP and 15.7 mil pitch TVSOP • Exten |
|
|
|
Renesas |
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVER • Std., A, and C grades • Low input and output leakage ≤1µA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • High Drive outputs (-15mA IOH, 64mA IOL) • Meets or exceeds JEDEC standard 18 |
|
|
|
IDT |
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVERS DESCRIPTION: • Common features: The 16-bit transceivers are built using advanced dual metal – 0.5 MICRON CMOS Technology CMOS technology. These high-speed, low-power transceiv- – High-speed, low-power CMOS replacement for ers are ideal for sy |
|
|
|
Renesas |
3.3V CMOS OCTAL BIDIRECTIONAL TRANSCEIVER • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 3.3V ±0.3V, Normal Range • VCC = 2.7V to 3.6V, Extended Range • CMOS power levels (0.4μW typ. static) • Rail-to-Rail outpu |
|
|
|
Integrated Device Technology |
3.3V CMOS 16-BIT TRANSPARENT LATCH • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP and 15.7 mil pitch TVSOP • Exten |
|
|
|
IDT |
FAST CMOS 16-BIT REGISTER DESCRIPTION: • Common features: The FCT16374T/AT/CT/ET and FCT162374T/AT/CT/ET – 0.5 MICRON CMOS Technology 16-bit edge-triggered D-type registers are built using ad- – High-speed, low-power CMOS replacement for vanced dual metal CMOS technol |
|
|
|
IDT |
FAST CMOS UP/DOWN BINARY COUNTERS • IDT54/74FCT193 equivalent to FAST™ speed • IDT54/74FCT193A 35% faster than FAST • Equivalent to FAST output drive over full temperature and voltage supply extremes • IOL = 48mA (commercial), 32mA (military) • CMOS power levels (1mW typ. static) • |
|
|
|
IDT |
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVERS DESCRIPTION: • Common features: The 16-bit transceivers are built using advanced dual metal – 0.5 MICRON CMOS Technology CMOS technology. These high-speed, low-power transceiv- – High-speed, low-power CMOS replacement for ers are ideal for sy |
|
|
|
IDT |
FAST CMOS 16-BIT BUFFER/LINE DRIVER DESCRIPTION: • Common features: The 16-Bit Buffer/Line Driver is for bus interface or signal buffering – 0.5 MICRON CMOS Technology applications requiring high speed and low power dissipation. These – High-speed, low-power CMOS replacement for |
|
|
|
IDT |
FAST CMOS 16-BIT BUFFER/LINE DRIVER DESCRIPTION: • Common features: The FCT16240T/AT/CT/ET and FCT162240T/AT/CT/ET – 0.5 MICRON CMOS Technology 16-bit buffer/line drivers are built using advanced dual metal – High-speed, low-power CMOS replacement for CMOS technology. These hig |
|
|
|
Integrated Device Technology |
3.3V CMOS 20-BIT BUFFERS • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP and 15.7 mil pitch TVSOP • Exten |
|
|
|
Integrated Device Tech |
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVERS • Common features: – 0.5 MICRON CMOS Technology – High-speed, low-power CMOS replacement for ABT functions – Typical tSK(o) (Output Skew) < 250ps – Low input and output leakage ≤ 1µ A (max.) – ESD > 2000V per MIL-STD-883, Method 3015; > 200V using m |
|
|
|
Integrated Device Technology |
FAST CMOS 8-BIT IDENTITY COMPARATOR − IDT54/74FCT521 equivalent to FASTTM speed − IDT54/74FCT521A 35% faster than FAST − IDT54/74FCT521B 50% faster than FAST − IDT54/74FCT521C 60% faster than FAST − Equivalent to FAST output drive over full temperature and voltage supply extremes − IO |
|
|
|
Renesas |
FAST CMOS OCTAL BUFFER/LINE DRIVER • A and C grades • Low input and output leakage ≤1µA (max.) • CMOS power levels • True TTL input and output compatibility: – VOH = 3.3V (typ.) – VOL = 0.3V (typ.) • Meets or exceeds JEDEC standard 18 specifications • Resistor outputs (-15mA IOH, 12m |
|
|
|
IDT |
Fast CMOS Carry Lookahead Generator • IDT54/74FCT182 equivalent to FASr" specs IDT54!74FCT182A 35% laster than FAST • Equivalent to FASr" speeds and output drive over lull temperature and voltage supply extremes • IOL = 32mA over full military temperature range • CMOS power levels (5p |
|
|
|
Integrated Device Technology |
3.3V CMOS 20-BIT BUFFERS • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP and 15.7 mil pitch TVSOP • Exten |
|
|
|
Integrated Device Tech |
3.3V CMOS OCTAL BUFFER/LINE DRIVER • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • 25 mil Center SSOP and QSOP Packages • Extended commercial range of -40°C to +85°C • VCC = 3.3V ±0.3V, Normal Range or VCC = 2.7 |
|
|
|
Integrated Device Technology |
3.3V CMOS 16-BIT BUFFER/LINE DRIVER • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP and 15.7 mil pitch TVSOP • Exten |
|
|
|
IDT |
FAST CMOS 16-BIT BUFFER/LINE DRIVER DESCRIPTION: • Common features: The FCT16240T/AT/CT/ET and FCT162240T/AT/CT/ET – 0.5 MICRON CMOS Technology 16-bit buffer/line drivers are built using advanced dual metal – High-speed, low-power CMOS replacement for CMOS technology. These hig |
|
|
|
IDT |
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVERS • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) < 250ps • Low input and output leakage ≤ 1µA (max.) • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 20 |
|