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ICONIC RF ICP DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
ICPB1020

ICONIC RF
Discrete Power GaN HEMT

• Frequency Range DC-14GHz
• 51.5dBm Nominal P3dB Pulsed
• Maximum PAE at 6GHz of 71%
• 18dB Linear Gain at 6GHz
• Drain Bias 28V
• Technology: GaN on SiC
• Lead-free and RoHS compliant
• Chip Dimensions: 0.82 x 4.56 x 0.10mm Applications
• Aerospace
Datasheet
2
ICP0349P

ICONIC RF
2.7 - 3.5GHz 70W GaN PA MMIC

• Frequency Range: 2.7-3.5GHz
• Pout: 48 dBm @ 24dBm Pin
• PAE: 60 %
• Small Signal Gain: 26.5dB
• Bias: VD=28V IDQ=200mA
• Technology: GaN on SiC
• Lead-free and RoHS compliant
• Package Dimensions: 7.0 x 7.0 x 0.85 mm Applications Image Electrica
Datasheet
3
ICPB1010

ICONIC RF
Discrete Power GaN HEMT

• Frequency Range DC-14GHz
• 48.5dBm Nominal P3dB Pulsed
• Maximum PAE at 6GHz of 72%
• 17.8dB Linear Gain at 6GHz
• Drain Bias 28V
• Technology: GaN on SiC
• Lead-free and RoHS compliant
• Chip Dimensions: 0.824 x 2.495 x 0.10mm Applications
• Aeros
Datasheet
4
ICPB2002

ICONIC RF
Discrete Power GaN HEMT

• Frequency Range DC-12GHz
• 41.5dBm Nominal P3dB
• Maximum PAE at 6GHz of 65%
• Drain Bias 28V
• Technology: GaN on SiC
• Lead-free and RoHS compliant
• Chip Dimensions: 0.81 x 1.14 x 0.10mm Applications
• Aerospace & Defense
• Broadband Wireless I
Datasheet
5
ICPB2005

ICONIC RF
Discrete Power GaN HEMT

• Frequency Range DC-12GHz
• 44.5dBm Nominal P3dB
• Maximum PAE at 6GHz of 65%
• Drain Bias 28V
• Technology: GaN on SiC
• Lead-free and RoHS compliant
• Chip Dimensions: 0.81 x 1.68 x 0.10mm Applications
• Aerospace & Defense
• Broadband Wireless I
Datasheet
6
ICPB1005

ICONIC RF
Discrete Power GaN HEMT

• Frequency Range DC-14GHz
• 45.5dBm Nominal P3dB Pulsed
• Maximum PAE at 6GHz of 70%
• 18dB Linear Gain at 6GHz
• Drain Bias 28V
• Technology: GaN on SiC
• Lead-free and RoHS compliant
• Chip Dimensions: 0.824 x 1.44 x 0.10mm Applications
• Aerospac
Datasheet



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