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HUASHAN |
NPN SILICON TRANSISTOR ctor Cut-off Current Emitter Cut-off Current DC Current Gain 54 0.1 146 0.5 1.42 10 0 300 ¦Ì A V V MHz V EB =3V, I C =0 V CE =6V, I C =1mA IC =10mA, I B =1mA IC =10mA, I B =1mA VCE =10V, I C =50mA VCE(sat) Collector- Emitter Saturation Voltage V |
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HUASHAN |
NPN SILICON TRANSISTOR 0.1 0.5 410 50 0.1 0.8 1.0 3.3 V V ¦Ì A ¦Ì A ¦Ì A V V V Kohm IC=10¦Ì A, IE=0 IC=0.1mA, IB=0 VCB=40V, IE=0 VCE=40V, IB=0 VEB=5V, IC=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.3V, IC=20mA 532 760 0.3 1.5 4.0 6.1 V I£¨ off £©Input O |
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HUASHAN |
NPN SILICON TRANSISTOR 50 50 5 0.1 0.1 100 0.4 0.6 3.3 V V V ¦Ì A ¦Ì A V V V K¦¸ IC=10¦Ì A, IE=0 IC=0.1mA, IB=0 IE=50¦Ì A£¬ IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.2V, IC=10mA VCE=10V,IC=5mA VCB=10V,f=1MHz 250 0.1 0.55 1.0 |
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HUASHAN |
NPN SILICON TRANSISTOR 0 50 5 0.1 0.1 100 0.4 0.8 33 V V V ¦Ì A ¦Ì A V V V Kohm IC=10¦Ì A, IE=0 IC=0.1mA, IB=0 IE=50¦Ì A£¬ IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=5mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.2V, IC=5mA VCE=10V,IC=5mA VCB=10V,f=1MHz 250 0.1 0.55 2.0 47 |
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Shantou Huashan Electronic Devices |
NPN Digital Transistor 0. 5 0.7 7.0 0. 193 ¦Ì A VCE=40V, IB=0 ¦Ì A VEB=5V, IC=0 VCE=5V, IC=5mA V V V Kohm Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage 88 125 0.3 0.9 2.0 13 0.234 IC=10mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.2V, IC=5mA V |
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Shantou Huashan Electronic Devices |
NPN Digital Transistor 0 50 5 0.1 0.1 100 0.4 0.7 7.0 V V V ¦Ì A ¦Ì A V V V K¦¸ IC=50¦Ì A, IE=0 IC=1mA, IB=0 IE=50¦Ì A£¬ IC=0 VCB=50V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCE=5V, IC=0.1mA VCE=0.2V, IC=10mA VCE=10V,IC=5mA VCB=10V,f=1MHz 600 0.3 0.55 1.2 10 |
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Huashan |
Sensitive Gate Silicon Controlled Rectifier Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat,Rugged,Thermopad Construction for Low Thermal Resistance Sensitive Gate Triggering Maximum Ratings Tj=25 |
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Shantou Huashan Electronic Devices |
NPN Digital Transistor 0.1 0.8 1.0 7.0 0.8 ¦Ì A VCE=40V, IB=0 ¦Ì A VEB=5V, IC=0 VCE=5V, IC=5mA V V V Kohm Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage 250 360 0.3 1.5 4.0 13 1.2 IC=10mA, IB=0.5mA VCE=5V, IC=0.1mA VCE=0.2V, IC=10mA V |
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Desde 2024. D4U Semiconductor.
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