| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Huajing Discrete Devices |
Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc |
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Desde 2024. D4U Semiconductor.
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