| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Holtek Semiconductor Inc |
CMOS 16Kx 8-Bit Mask ROM • • • • • Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA Max. (V CC=5V) 10mA Max. (VCC=3V) – Standby: 30µA Max. (VCC=5V) 10µA Max. (VCC=3V) Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V) • • • • 16384×8 bits of mask ROM |
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Holtek Semiconductor Inc |
1K/2K 2-Wire CMOS Serial EEPROM • • • • • • Operating voltage: 2.4V~5.5V Low power consumption – Operation: 5mA max. – Standby: 5µA max. Internal organization – 1K (HT24LC01):128×8 – 2K (HT24LC02): 256×8 2-wire serial interface Write cycle time: 5ms max. Automatic erase-before-w |
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Holtek Semiconductor Inc |
OTP CMOS 128Kx 8-Bit EPROM · Operating voltage: +5.0V · Programming voltage - VPP=12.5V±0.2V - VCC=6.0V±0.2V · 128K´8-bit organization · Fast read access time: 70ns · Fast programming algorithm · Programming time 75ms typ. · Two line controls (OE and CE) · Standard product ide |
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Holtek Semiconductor |
CMOS 64K 2-WIRE SERIAL EEPROM is enabled and operates as shown in the following table. WP Pin Status At VCC At VSS (floating) Protect Array Full Array (64K) Normal Read/Write Operations S C L S ta rt c o n d itio n A d d re s s o r a c k n o w le d g e v a lid N o A C K s ta te |
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Holtek Semiconductor Inc |
1K/2K 2-Wire CMOS Serial EEPROM • • • • • • Operating voltage: 2.4V~5.5V Low power consumption – Operation: 5mA max. – Standby: 5µA max. Internal organization – 1K (HT24LC01):128×8 – 2K (HT24LC02): 256×8 2-wire serial interface Write cycle time: 5ms max. Automatic erase-before-w |
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Holtek Semiconductor Inc |
CMOS 8K 2-Wire Serial EEPROM · Operating voltage: 2.2V~5.5V · Low power consumption - Operation: 5mA max. - Standby: 5mA max. · Internal organization: 1024´8 · 2-wire Serial Interface · Write cycle time: 5ms max. · Automatic erase-before-write operation · Partial page write allo |
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Holtek Microelectronics |
Triple Tone Generator |
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Holtek Microelectronics |
Single Sound Generator |
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Holtek Microelectronics |
Lotto FLASH Driver |
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Holtek Semiconductor |
(HT201xx) One Lamp/LED Flash Driver • • • • • • • • • CMOS Metal-Gate Process Technology Operating voltage: 1.2V~4.5V Low standby current: 1µA Typ. at 3V Built-in oscillator (FOSC: 32KHz) ON/OFF control function for the HT2013H, HT2013M, HT2013L 1/8 duty cycle output Directly driving |
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Holtek Semiconductor |
(HT201xx) One Lamp/LED Flash Driver • • • • • • • • • CMOS Metal-Gate Process Technology Operating voltage: 1.2V~4.5V Low standby current: 1µA Typ. at 3V Built-in oscillator (FOSC: 32KHz) ON/OFF control function for the HT2013H, HT2013M, HT2013L 1/8 duty cycle output Directly driving |
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Holtek Semiconductor |
(HT201xx) One Lamp/LED Flash Driver • • • • • • • • • CMOS Metal-Gate Process Technology Operating voltage: 1.2V~4.5V Low standby current: 1µA Typ. at 3V Built-in oscillator (FOSC: 32KHz) ON/OFF control function for the HT2013H, HT2013M, HT2013L 1/8 duty cycle output Directly driving |
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Holtek Semiconductor |
CMOS 32K 2-Wire Serial EEPROM • Operating voltage: 1.8V~5.5V for temperature -40°C to +85°C • Low power consumption – – Operation: 5mA max. – – Standby: 3μA max. • Internal organization: 4096×8 • 2-wire serial interface • Write cycle time: 5ms max. • Automatic erase-before-wr |
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Holtek |
Ding Dong Door Bell |
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Holtek Semiconductor |
CMOS 2K 2-Wire Serial EEPROM • Operating voltage 1.8V~5.5V for temperature -40°C to +85°C • Low power consumption – – Operation: 5mA max. – – Standby: 2μA max. • Internal organization: 256×8 • 2-wire serial interface • Write cycle time: 5ms max. • Automatic erase-before-writ |
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Holtek Semiconductor Inc |
CMOS 128K 8-Bit Mask ROM • • • Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA Max. (V CC=5V) 10mA Max. (VCC=3V) – Standby: 30µA Max. (VCC=5V) 10µA Max. (VCC=3V) Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V) • • • • • • 131072×8 bits of mask RO |
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Holtek Semiconductor Inc |
CMOS 256Kx 8-Bit Mask ROM • • • Operating voltage 2.7V~5.5V Low power consumption – Operation: 25mA max. (V CC=5V) 10mA max. (VCC=3V) – Standby: 30µA max. (VCC=5V) 10µA max. (VCC=3V) Access time:150ns max. (VCC=5V) 250ns max. (VCC=3V) • • • • • • 262144×8 bits of mask RO |
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Holtek Semiconductor Inc |
CMOS 512Kx8-Bit Mask ROM · · HT23C040 · Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA max. (V CC=5V) 10mA max. (VCC=3V) – Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 120ns max. (VCC=5V) 250ns max. (VCC=3V) · · · · · · 524288´8-bit |
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Holtek Semiconductor Inc |
CMOS 32Kx 8-Bit Mask ROM • • • Operating voltage 2.7V~5.5V Low power consumption – Operation: 25mA max. (V CC=5V) 10mA max. (VCC=3V) – Standby: 30µA max. (VCC=5V) 10µA max. (VCC=3V) Access time:150ns max. (VCC=5V) 250ns max. (VCC=3V) • • • • • • 32768×8 bits of mask ROM |
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Holtek Semiconductor Inc |
CMOS 64Kx 8-Bit Mask ROM • • • • • • • • • Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA Max. (VCC=5V) 10mA Max. (VCC=3V) – Standby: 30µA Max. (VCC=5V) 10µA Max. (VCC=3V) Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V) 65536×8 bits of mask ROM M |
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Desde 2024. D4U Semiconductor.
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