| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
2SK1762 • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1762 Absolute Maximum Ratings (Ta = 25°C) It |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) ≤ 0.045 , VGS = 10 V, I D = 10 A R DS(on) ≤ 0.065 , VGS = 4 V, I D = 10 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lam |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1762 Absolute Maximum Ratings (Ta = 25°C) It |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK1764 Absolute Maximum Ratings ( |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Sou |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1773 Absolute Maximum Ratings (Ta = 25°C) |
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Hitachi Semiconductor |
N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1775 Absolute Maximum Ratings (Ta = 25°C) It |
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Desde 2024. D4U Semiconductor.
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