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Hitachi Semiconductor |
Silicon Schottky Barrier Diode • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use. MPAK package is suitable for high density surface mounting and high speed assembly. |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88WA Laser Mark C7 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HSM |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode for System Protection • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and – surge. • Low VF and low leakage current. • MPAK package is suitable for high density surface mounting and high speed a |
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Hitachi Semiconductor |
Silicon Epitaxial Planar Diode • Low capacitance, proof against high voltage. • Fast recovery time. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM221C Laser Mark A2 Package Code MPAK Pin Arrangement 3 2 1 |
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Hitachi Semiconductor |
Silicon Epitaxial Planar Diode • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2693A Laser Mark B4 Package Code MPAK Pin Arrangement |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No |
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Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for High Voltage Switching • High reverse voltage. (VR = 250V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM83 Laser Mark F7 Package Code MPAK Outline 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HSM8 |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88ASR Laser Mark C3 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode for System Protection • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. • MPAK package is suitable for high density surfa |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode for System Protection • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. • MPAK package is suitable for high density surfa |
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Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for Switching • Low reverse current. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM124S Laser Mark A1 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode |
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Hitachi Semiconductor |
Silicon Epitaxial Planar Diode • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2692 Laser Mark B1 Package Code MPAK Pin Arrangement 3 |
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Hitachi Semiconductor |
Silicon Epitaxial Planar Diode • Low forward resistance. (rf = 0.9 max) • Low capacitance. (C = 1.2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2694 Laser Mark B3 Package Code MPAK Pin Arrangement 3 |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode • High forward current, Low capacitance. • HSM276AS which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type N |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode • High forward current, Low capacitance. • HSM276SR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type N |
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Hitachi Semiconductor |
Silicon Epitaxial Planar Diode • Fast recovery time. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2838C Laser Mark A6 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HSM28 |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88AS Laser Mark C1 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode |
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Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88WK Laser Mark C4 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 2 Anode 3 Cathode HSM88 |
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Desde 2024. D4U Semiconductor.
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