| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
|
|
|
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) • Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation Active: 50 mW/MHz (typ) Standby: 10 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three |
|
|
|
|
Hitachi Semiconductor |
2048-word X 8bit High Speed CMOS Static RAM |
|
|
|
|
Hitachi Semiconductor |
32/768-word x 8-bit High Speed CMOS Static RAM • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 5 µW (typ) (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static memory No clock or timing strobe required • Equal access and cycle time |
|
|
|
|
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
|
|
|
Hitachi Semiconductor |
HM65256BLFP-12T |
|
|
|
|
Hitachi Semiconductor |
16384-word x 4-bit High Speed CMOS Static RAM • Single 5 V supply arid high density plastic package • High speed: fast access time 25/35 ns (max) • Low power dissipation: Active mode 300 mW (typ) Standby mode 100 µW (typ) • Completely static memory No clock or timing strobe required • Equal acce |
|
|
|
|
Hitachi Semiconductor |
4M High Speed SRAM (256-kword x 16-bit) • Single 5.0 Vsupply : 5.0 V ± 10 % • Access time: 10 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 170 mA (max) • TTL s |
|
|
|
|
Hitachi Semiconductor |
64k SRAM (8-kword x 8-bit) Wide Temperature Range version • Single 5 V supply: 5 V ± 10% • Access time: 100/120 ns (max) • Power dissipation: Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Common da |
|
|
|
|
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
|
|
|
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
|
|
|
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) • Single supply : 3.3 V ± 0.3 V • Access time 12/15 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current : 150/130 mA (max) • TT |
|
|
|
|
Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) • Single 5.0 V supply : 5.0 V ± 10 % • Access time 10/12/15 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 200/180/160 mA |
|
|
|
|
Hitachi Semiconductor |
4M high Speed SRAM (256-kword x 16-bit) • Single 5.0 Vsupply : 5.0 V ± 10 % • Access time: 12/15 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 200/180 mA (max) |
|
|
|
|
Hitachi Semiconductor |
256k SRAM (32-kword x 8-bit) • Single 5.0 V supply: 5.0 V ± 10% • Access time: 55 ns/70 ns/85 ns (max) • Power dissipation: Active: 25 mW (typ) (f = 1 MHz) Standby: 1.0 µW (typ) • Completely static memory No clock or timing strobe required • Equal access and cycle times • |
|
|
|
|
Hitachi Semiconductor |
8192-word x 8-bit High Speed CMOS Static RAM |
|
|
|
|
Hitachi Semiconductor |
64 k SRAM (8-kword x 8-bit) • High speed Fast access time: 85/100 ns (max) • Low power Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static memory No clock or timing strobe required • Equal access and cycle times • Common data input an |
|
|
|
|
Hitachi Semiconductor |
4M High Speed SRAM (512-kword x 8-bit) • Single 5.0 V supply: 5.0 V ± 10 % • Access time: 10 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 140 mA (max) • TTL s |
|
|
|
|
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) • Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation Active: 50 mW/MHz (typ) Standby: 10 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three |
|
|
|
|
Hitachi Semiconductor |
4 M SRAM (512-kword x 8-bit) • Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation Active: 50 mW/MHz (typ) Standby: 10 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output: Three |
|
Desde 2024. D4U Semiconductor.
|