Hitachi Semiconductor HB5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HB56AW1672E	Hitachi Semiconductor	16777216 Word x 72-Bit High Density DRAM Module
2	HB56A132SBW	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin single in-line package — Lead pitch: 1.27 mm • Single 5 V (± 5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 4.62W/4.20W/3.78W (max) — Standby mode: 84 mW (max) 4.2 mW (max) (L-version) •
3	HB56D473EJ-7	Hitachi Semiconductor	High Density Dynamic RAM Module • 168-pin socket type package (Dual lead out)  Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness)  Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed  Access time: tRAC = 60/70 ns (max) tCAC = 20/25 ns (max) • Low power
4	HB56D473EJ-6	Hitachi Semiconductor	High Density Dynamic RAM Module • 168-pin socket type package (Dual lead out)  Outline: 133.35 mm (Length) × 25.40 mm (Height) × 9.00 mm (Thickness)  Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed  Access time: tRAC = 60/70 ns (max) tCAC = 20/25 ns (max) • Low power
5	HB56A440BR	Hitachi Semiconductor	(HB56A840BR / HB56A440BR) 40-Bit High Density DRAM Module
6	HB56D836BR	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin single in-line package  Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness)  Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed  Access time: tRAC = 60/70ns (max) • Low power dissipation  Active mode: 6.41
7	HB56D436SBR	Hitachi Semiconductor	High Density Dynamic RAM Module
8	HB56SW3272ESK	Hitachi Semiconductor	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) • 168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm • Single 3.3 V supply (±0.3 V) • High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max) • Low power dissipation  Active mode: 8.78 W/7.49 W (max
9	HB56SW3272ESK-5	Hitachi Semiconductor	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) • 168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm • Single 3.3 V supply (±0.3 V) • High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max) • Low power dissipation  Active mode: 8.78 W/7.49 W (max
10	HB56SW3272ESK-6	Hitachi Semiconductor	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components) • 168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm • Single 3.3 V supply (±0.3 V) • High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max) • Low power dissipation  Active mode: 8.78 W/7.49 W (max
11	HB56A840BR	Hitachi Semiconductor	(HB56A840BR / HB56A440BR) 40-Bit High Density DRAM Module
12	HB56AW172E	Hitachi Semiconductor	1M x 72-Bit HIgh Density DRAM Module
13	HB56A132	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin single in-line package — Lead pitch: 1.27 mm • Single 5 V (± 5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 4.62W/4.20W/3.78W (max) — Standby mode: 84 mW (max) 4.2 mW (max) (L-version) •
14	HB56A132BW	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin single in-line package — Lead pitch: 1.27 mm • Single 5 V (± 5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 4.62W/4.20W/3.78W (max) — Standby mode: 84 mW (max) 4.2 mW (max) (L-version) •
15	HB56A132BU	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin single in-line package — Lead pitch: 1.27 mm • Single 5 V (± 5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 4.62W/4.20W/3.78W (max) — Standby mode: 84 mW (max) 4.2 mW (max) (L-version) •
16	HB56D136	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin — Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 5.46 W/4.94 W/4.41 W (max) — Standby mode: 105 mW (max) 5.25 mW (max) (L-version) • Fast page mode cap
17	HB56D136BW	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin — Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed — Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode: 5.46 W/4.94 W/4.41 W (max) — Standby mode: 105 mW (max) 5.25 mW (max) (L-version) • Fast page mode cap
18	HB56D836SBR	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin single in-line package  Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness)  Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed  Access time: tRAC = 60/70ns (max) • Low power dissipation  Active mode: 6.41
19	HB56D436BR	Hitachi Semiconductor	High Density Dynamic RAM Module • 72-pin single in-line package  Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness)  Lead pitch: 1.27 mm • Single 5 V (±5%) supply • High speed  Access time: tRAC = 60/70ns (max) • Low power dissipation  Active mode: 6.41