Hitachi Semiconductor HAT Hoja de datos

No.	parte #	Fabricante	Descripción
1	HAT2028R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2028R
2	HAT2038RJ	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2038R
3	HAT1036R	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • Low on-resistance R DS(on) = 11 mΩ typ • Capable of -4 V gate drive • Low drive current • High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1036R Absolute Maximum Ra
4	HAT1044M	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • • • • Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP –6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1044M Absolute Maximum Ratings (Ta = 25°C)
5	HAT2019R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2019R Absolute Maximum Ratings (Ta = 25°C) It
6	HAT2020R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2020R Absolute Maximum Ratings (Ta = 25°C) Item
7	HAT1016R	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1016R Absolute Maximum Ratings (Ta
8	HAT1038RJ	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1038R
9	HAT1043M	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP –6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1043M Absolute Maximum Ratings (Ta = 25°
10	HAT2016R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2016R Absolute Maximum Ratings (Ta
11	HAT2025R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • • High speed switching Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2025R Absolute Maximum R
12	HAT2026R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2026R Absolute Maximum Ratings (Ta = 25°C) It
13	HAT2027R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2027R Absolute Maximum Ratings (T
14	HAT2028RJ	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2028R
15	HAT2039R	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2039R Absolute Maximum Ratings (T
16	HAT2051T	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP –8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2051T Absolute Maximum Ratings
17	HAT2053M	Hitachi Semiconductor	Silicon N-Channel Power MOSFET • • • • Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source Outline TSOP –6 4 5 6 3 2 1 1 2 5 6 D D D D 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2053M Absolute Maximum Ratings (Ta = 25°
18	HAT1020R	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1020R Absolute Maximum Ratings (Ta = 25°C) Item
19	HAT1021R	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1021R Absolute Maximum Ratings (Ta = 25°C) It
20	HAT1023R	Hitachi Semiconductor	Silicon P-Channel Power MOSFET • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1023R Absolute Maximum Ratings (Ta = 25°C) It