| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
Silicon NPN Epitaxial Transistor wn V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE* 85 — — — |
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Hitachi Semiconductor |
Silicon NPN Transistor tion voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: B 85 to170 C 120 to 240 V(BR)EBO I CBO hFE* 85 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = 0.5 A, IB = 0.05 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pul |
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Hitachi Semiconductor |
Silicon NPN Transistor down voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE* 85 — — — — VCE(sat) VBE fT Cob V V MHz pF Note |
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Desde 2024. D4U Semiconductor.
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