| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SC4747 • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.3 µs Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to |
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Hitachi Semiconductor |
NPN TRANSISTOR • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltag |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4784 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base |
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Hitachi Semiconductor |
2SC4742 • High breakdown voltage VCES = 1500 V • Built-in damper diode type Outline TO-3P 2 1. Base 2. Collector (Flange) 3. Emitter 1 ID 1 2 3 3 www.DataSheet4U.com 2SC4742 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Em |
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Hitachi Semiconductor |
Silicon NPN Transistor • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO –3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to b |
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Hitachi Semiconductor |
Silicon NPN Epitaxial • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complementary pair of 2SA1810 TO-126 MOD Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
NPN TRANSISTOR • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO –3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to b |
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Hitachi Semiconductor |
Silicon NPN Transistor |
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Hitachi Semiconductor |
2SC4744 |
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Hitachi Semiconductor |
NPN TRANSISTOR • High breakdown voltage VCES = 1500 V • Built-in damper diode type Outline TO-3P 2 1. Base 2. Collector (Flange) 3. Emitter 1 ID 1 2 3 3 2SC4742 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage |
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Hitachi Semiconductor |
NPN TRANSISTOR • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.3 µs Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to |
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Hitachi Semiconductor |
NPN TRANSISTOR • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25°C) Item Col |
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Hitachi Semiconductor |
Silicon NPN Transistor • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complementary pair of 2SA1810 TO-126 MOD Absolute Maximum Ratings (Ta = |
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Desde 2024. D4U Semiconductor.
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