| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SB861 lector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Collector output capacitance VCE(sat) VBE Cob 60 60 — — — V V pF I C = –500 mA, IB = –50 mA VCE = –4 V, IC = |
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Hitachi Semiconductor |
Silicon PNP Transistor own voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio V(BR)EBO I CEO I EBO VCE(sat) hFE Maximum Collector Dissepation Curve 60 Collector power dissipaition PC (W) –10 ICmax Coll |
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Hitachi Semiconductor |
Silicon PNP Transistor atio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Collector output capacitance VCE(sat) VBE Cob 60 60 — — — V V pF I C = –500 mA, IB = –50 mA VCE = –4 V, IC = –50 mA VCB = –100 V, IE = 0, f = 1 MHz Not |
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Desde 2024. D4U Semiconductor.
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