| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
2SB791 = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB1 = IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Col |
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Hitachi Semiconductor |
Silicon PNP Transistor 8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB1 = IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation v |
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Hitachi Semiconductor |
Silicon PNP Transistor 8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB1 = IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation v |
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Desde 2024. D4U Semiconductor.
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