Hitachi Semiconductor B72 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B727	Hitachi Semiconductor	2SB727 n t off — — 1000 — — — — — — Typ — — — — — — — — — 1.0 3.0 Max Unit —V —V –100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V — µs — µs Test conditions IC = –25 mA, RBE = ∞ IE = –50 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, I
2	2SB727	Hitachi Semiconductor	Silicon PNP Transistor = –6 A, IB = –60 mA*1 I C = –3 A, IB1 = –IB2 = –6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Bas
3	2SB727K	Hitachi Semiconductor	Silicon PNP Transistor