Hitachi Semiconductor A89 Hoja de datos

No.	parte #	Fabricante	Descripción
1	A893A	Hitachi Semiconductor	2SA893A oise figure Cob — 1.8 — — 1.8 NF — 2 10 — 2 Note: 1. The 2SA893/A is grouped by hFE as follows. DE 250 to 500 400 to 800 Max Unit Test conditions —V IC = –1 mA, RBE = ∞ — µA –0.5 µA 800 –0.75 V –0.5 V — MHz — pF VCB = –75 V, IE = 0 VCB = –100
2	A893	Hitachi Semiconductor	2SA893 oise figure Cob — 1.8 — — 1.8 NF — 2 10 — 2 Note: 1. The 2SA893/A is grouped by hFE as follows. DE 250 to 500 400 to 800 Max Unit Test conditions —V IC = –1 mA, RBE = ∞ — µA –0.5 µA 800 –0.75 V –0.5 V — MHz — pF VCB = –75 V, IE = 0 VCB = –100
3	2SA893	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor VCE = –6 V, I C = –50 µA Rg = 50 kΩ, f = 1 kHz Min –90 — — Typ — — — — — — 120 1.8 2 –120 — — — 250 — — — — — 120 1.8 2 DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — –0.75 — –0
4	2SA893A	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor VCE = –6 V, I C = –50 µA Rg = 50 kΩ, f = 1 kHz Min –90 — — Typ — — — — — — 120 1.8 2 –120 — — — 250 — — — — — 120 1.8 2 DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — –0.75 — –0