Hitachi Semiconductor A87 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SA872	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor 10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to em
2	2SA872A	Hitachi Semiconductor	Silicon PNP Epitaxial Transistor 10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to em
3	A872A	Hitachi Semiconductor	2SA872A 10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to em
4	A872	Hitachi Semiconductor	2SA872 = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter