Hitachi HN2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HN27C301AG	Hitachi	CMOS UV EPROM                  this material copyrighted by its respective manufacturer        
2	HN27C101FP	Hitachi	131072-word x 8-Bit CMOS One Time EPROM
3	HN27128AG	Hitachi	16K x 8-Bit UV EPROM
4	HN27512	Hitachi	512K UV and OTP EPROM
5	HN27C4096AG	Hitachi	262144-word x 16-bit CMOS UV Erasable and Programmable ROM • High speed: Access time 100 ns/120 ns/150 ns (max) • Low power dissipation: Standby mode; 5 µW (typ) Active mode; 35 mW/MHz (typ) • Fast high reliability page programming and fast high-reliability programming Programming voltage; +12.5 V D.C. Progr
6	HN27C256HG	Hitachi Semiconductor	32768-word x 8-bit CMOS UV Erasable and Programmable ROM • High speed: Access time
7	HN27C101G	Hitachi	131072 word x 8 Bit CMOS UV EPROM
8	HN27C101AG	Hitachi	CMOS UV EPROM                  this material copyrighted by its respective manufacturer        
9	HN29W12814ATT-50	Hitachi	128M and Type Flash Memory More than 16057 Sector X 2
10	HN29W12814A	Hitachi	128M and Type Flash Memory More than 16057 Sector X 2
11	HN27C4096	Hitachi Semiconductor	4M UV and OTP EPROM
12	HN27C256A	Hitachi Semiconductor	256K UV and OTP EPROM
13	HN27C256G	Hitachi Semiconductor	256K UV and OTP EPROM
14	HN27C64G	Hitachi Semiconductor	8192-word x 8-bit UV Erasable and Programmable CMOS ROM
15	HN27C256AG	Hitachi Semiconductor	32768-word x 8-bit UV Erasable and Programmable ROM • High speed Access time: 100/120/150 ns (max) • Low power dissipation Active mode: 25 mW (typ) (f = 1 MHz) Standby mode: 5 µW (typ) • High reliability and fast programming Programming voltage: +12.5 V DC Fast High-Reliability Programming Algorithm a
16	HN29V51211	Hitachi Semiconductor	512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) • On-board single power supply (VCC): VCC = 2.7 V to 3.6 V • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)  Data register: (2048 + 64) bytes • Multi-level memory cell  2 bit/per memory cell • Automatic programming
17	HN29W12811	Hitachi Semiconductor	128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)  Data register: (2048 + 64) bytes • Multi-level memory cell  2 bit/per memory cell • Automatic programming 
18	HN29W25611	Hitachi Semiconductor	256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)  Data register: (2048 + 64) bytes • Multi-level memory cell  2 bit/per memory cell • Automatic programming 
19	HN27C4096ACC	Hitachi	262144-word x 16-bit CMOS UV Erasable and Programmable ROM • High speed: Access time 100 ns/120 ns/150 ns (max) • Low power dissipation: Standby mode; 5 µW (typ) Active mode; 35 mW/MHz (typ) • Fast high reliability page programming and fast high-reliability programming Programming voltage; +12.5 V D.C. Progr
20	HN27C101A	Hitachi	1M UV and OTP EPROM